
Andrew Edwards
Device engineer with experience in development and production of power and RF/microwave wide bandgap devices. Example production... | San Jose, California, United States
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Andrew Edwards’s Location San Jose, California, United States
Andrew Edwards’s Expertise Device engineer with experience in development and production of power and RF/microwave wide bandgap devices. Example production products include: - Novel AlGaN/GaN-on-Si normally-off HEMT. - High voltage GaN-on-GaN transistors used for prototype applications, and sampled to customers. - High voltage GaN-on-GaN PN diodes used for reliability evaluations, and sampled to customers. - Medium voltage GaN-on-Si transistor transferred to high volume manufacturing for Class D audio application. - RF GaN-on-Si transistor manufactured for cable TV line amplifier application. - High volume high-rel Si power diodes and modules Technologies developed: Power GaN MISHEMT, GaN PN Diodes, Schottky Diodes, Merged PN-Schottky Diodes, Power GaN JFET, High Reliability Silicon P-i-N Diodes, Schottky Diodes, multichip diodes, modules. Microwave/RF GaN HEMT, Monolithic Microwave Integrated Circuits Extensive test and characterization: HP4145, curvetracer, SMU, C-V, pulsed I-V, load pull, s-parameter, hot/cold chuck, autoprober Layout experience: Cadence Virtuoso, Layout Editor Interpretation of Failure Analysis: SIMS, FIB/TEM, EDAX, EMMI, SEM, XIVA Simulation and Modeling: Excel, TCAD (Silvaco and Synopsys), Multiphysics FEA (Thermal), Spice, ADS, Microwave Office, 1D Poisson/Schrodinger Hands on experience with a wide variety of semiconductor processing techniques including: e-beam evaporation, ICP etch, RIE etch, ion implantation, RTA, sputtering, furnace anneal, PECVD, wet etch, photolithography, LPCVD
Andrew Edwards’s Current Industry Toshiba America Electronic Components
Andrew
Edwards’s Prior Industry
Sensitron Semiconductor
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Asee
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Nitronex
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International Rectifier
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Nexgen Power Systems
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Toshiba America Electronic Components
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Work Experience

Toshiba America Electronic Components
Senior GaN Device Engineer
Sun Jun 01 2014 00:00:00 GMT+0000 (Coordinated Universal Time) — Mon Aug 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time)
Nexgen Power Systems
Principal GaN Device Engineer
Mon Nov 01 2010 00:00:00 GMT+0000 (Coordinated Universal Time) — Present
International Rectifier
GaN Device Engineer
Sun Feb 01 2009 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Oct 01 2010 00:00:00 GMT+0000 (Coordinated Universal Time)
Nitronex
GaN Device Engineer
Sun May 01 2005 00:00:00 GMT+0000 (Coordinated Universal Time) — Mon Dec 01 2008 00:00:00 GMT+0000 (Coordinated Universal Time)
Asee
Postdoctoral Research Fellow
Tue Jan 01 2002 00:00:00 GMT+0000 (Coordinated Universal Time) — Sat Jan 01 2005 00:00:00 GMT+0000 (Coordinated Universal Time)
Sensitron Semiconductor
Engineer / Production Manager
Thu Jan 01 1998 00:00:00 GMT+0000 (Coordinated Universal Time) — Tue Jan 01 2002 00:00:00 GMT+0000 (Coordinated Universal Time)