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Nandha Kumar Subramani

Good knowledge in the area of Semiconductor device physics, ESD domain, TCAD Simulations, RF characterizations and Analytic Modeling... | Dresden, Saxony, Germany

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Nandha Kumar Subramani’s Location Dresden, Saxony, Germany

Nandha Kumar Subramani’s Expertise Good knowledge in the area of Semiconductor device physics, ESD domain, TCAD Simulations, RF characterizations and Analytic Modeling of devices. PhD Research: Identification and analysis of trapping mechanisms in GaN HEMT technology through measurements and TCAD-based physical simulations 1. LF-S/Y Parameters measurements, LF Drain Noise measurements and Drain/Gate-Lag measurements are used to extract the physical properties of traps (Activation energy and cross section of traps) 2. 2D TCAD Physical simulations: To confirm the physical location of these traps using the calibrated TCAD simulation model 3. 3D Thermal simulations: Extracted the thermal resistance of GaN HEMT devices grown on Si/SiC substrates TCAD Engineer (GlobalFoundries): 1. TCAD calibration (Process and Device) of different technology nodes. 2. Supporting TechDev team to optimize the device process and provide TCAD split proposal to improve the future device performance. ESD Engineer (GlobalFoundries): 1. Designing ESD test structures in each upcoming customer testsites. 2. Defining Inline electrical parameters of ESD devices and monitor them Inline and analyze the data. 3. Characterize ESD structures (DC and TLP measurements) in order to develop the model and update them in the next coming pdk version. Highly motivated, dedicated and hard-working towards achieving short-time and long-time goals. If interested in my profile, you can reach me through this profile or by email at [email protected]

Nandha Kumar Subramani’s Current Industry Globalfoundries

Nandha Kumar Subramani’s Prior Industry
Universite De Limoges | Globalfoundries

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Work Experience

Globalfoundries

Principal ESD Engineer

Fri Sep 01 2023 00:00:00 GMT+0000 (Coordinated Universal Time) — Present

Globalfoundries

Senior Engineer

Mon Jan 01 2018 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Sep 01 2023 00:00:00 GMT+0000 (Coordinated Universal Time)

Universite De Limoges

Doctoral Student

Wed Oct 01 2014 00:00:00 GMT+0000 (Coordinated Universal Time) — Sun Jan 01 2017 00:00:00 GMT+0000 (Coordinated Universal Time)

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Nandha Kumar Subramani Email Addresses

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FAQ About Nandha Kumar Subramani

Nandha Kumar Subramani is located at
Dresden, Saxony, Germany

Nandha Kumar Subramani is a
Good knowledge in the area of Semiconductor device physics, ESD domain, TCAD Simulations, RF characterizations and Analytic Modeling of devices. PhD Research: Identification and analysis of trapping mechanisms in GaN HEMT technology through measurements and TCAD-based physical simulations 1. LF-S/Y Parameters measurements, LF Drain Noise measurements and Drain/Gate-Lag measurements are used to extract the physical properties of traps (Activation energy and cross section of traps) 2. 2D TCAD Physical simulations: To confirm the physical location of these traps using the calibrated TCAD simulation model 3. 3D Thermal simulations: Extracted the thermal resistance of GaN HEMT devices grown on Si/SiC substrates TCAD Engineer (GlobalFoundries): 1. TCAD calibration (Process and Device) of different technology nodes. 2. Supporting TechDev team to optimize the device process and provide TCAD split proposal to improve the future device performance. ESD Engineer (GlobalFoundries): 1. Designing ESD test structures in each upcoming customer testsites. 2. Defining Inline electrical parameters of ESD devices and monitor them Inline and analyze the data. 3. Characterize ESD structures (DC and TLP measurements) in order to develop the model and update them in the next coming pdk version. Highly motivated, dedicated and hard-working towards achieving short-time and long-time goals. If interested in my profile, you can reach me through this profile or by email at [email protected] Globalfoundries

Nandha Kumar Subramani currently works in the
Globalfoundries

Nandha Kumar Subramani specializes in
Good knowledge in the area of Semiconductor device physics, ESD domain, TCAD Simulations, RF characterizations and Analytic Modeling of devices. PhD Research: Identification and analysis of trapping mechanisms in GaN HEMT technology through measurements and TCAD-based physical simulations 1. LF-S/Y Parameters measurements, LF Drain Noise measurements and Drain/Gate-Lag measurements are used to extract the physical properties of traps (Activation energy and cross section of traps) 2. 2D TCAD Physical simulations: To confirm the physical location of these traps using the calibrated TCAD simulation model 3. 3D Thermal simulations: Extracted the thermal resistance of GaN HEMT devices grown on Si/SiC substrates TCAD Engineer (GlobalFoundries): 1. TCAD calibration (Process and Device) of different technology nodes. 2. Supporting TechDev team to optimize the device process and provide TCAD split proposal to improve the future device performance. ESD Engineer (GlobalFoundries): 1. Designing ESD test structures in each upcoming customer testsites. 2. Defining Inline electrical parameters of ESD devices and monitor them Inline and analyze the data. 3. Characterize ESD structures (DC and TLP measurements) in order to develop the model and update them in the next coming pdk version. Highly motivated, dedicated and hard-working towards achieving short-time and long-time goals. If interested in my profile, you can reach me through this profile or by email at [email protected]