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Seung Bae

DRAM Design(DDR5/LPDDR5/GDDR6) NAND Flash Design High speed DRAM interface design - DLL/PLL, clocking, low noise single ended signaling techniques Low power... | South Korea

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Seung Bae’s Location South Korea

Seung Bae’s Expertise DRAM Design(DDR5/LPDDR5/GDDR6) NAND Flash Design High speed DRAM interface design - DLL/PLL, clocking, low noise single ended signaling techniques Low power equalization for high speed interface - DFE, linear equalizer, integrating DFE Analog circuit design - Regulator, reference generator, temperature sensor Next generation memory architecture DRAM core analog circuit design 50+ technical papers and 70+ US patents Presenting author of 4 ISSCC and 1 VLSI

Seung Bae’s Current Industry 삼성전자

Seung Bae’s Prior Industry
Samsung Electronics | 삼성전자 | Massachusetts Institute Of Technology

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Work Experience

삼성전자

Vice President

Sat Dec 01 2018 00:00:00 GMT+0000 (Coordinated Universal Time) — Present

Massachusetts Institute Of Technology

Visiting Scientist

Thu Aug 01 2013 00:00:00 GMT+0000 (Coordinated Universal Time) — Fri Aug 01 2014 00:00:00 GMT+0000 (Coordinated Universal Time)

삼성전자

Principal Engineer

Thu Mar 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time) — Thu Nov 01 2018 00:00:00 GMT+0000 (Coordinated Universal Time)

Samsung Electronics

Senior Engineer

Thu Sep 01 2005 00:00:00 GMT+0000 (Coordinated Universal Time) — Wed Feb 01 2012 00:00:00 GMT+0000 (Coordinated Universal Time)

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Languages

Seung Bae Email Addresses

[email protected] Email

Seung Bae Phone Number

No phone number available. Phone number

FAQ About Seung Bae

Seung Bae is located at
South Korea

Seung Bae is a
DRAM Design(DDR5/LPDDR5/GDDR6) NAND Flash Design High speed DRAM interface design - DLL/PLL, clocking, low noise single ended signaling techniques Low power equalization for high speed interface - DFE, linear equalizer, integrating DFE Analog circuit design - Regulator, reference generator, temperature sensor Next generation memory architecture DRAM core analog circuit design 50+ technical papers and 70+ US patents Presenting author of 4 ISSCC and 1 VLSI 삼성전자

Seung Bae currently works in the
삼성전자

Seung Bae specializes in
DRAM Design(DDR5/LPDDR5/GDDR6) NAND Flash Design High speed DRAM interface design - DLL/PLL, clocking, low noise single ended signaling techniques Low power equalization for high speed interface - DFE, linear equalizer, integrating DFE Analog circuit design - Regulator, reference generator, temperature sensor Next generation memory architecture DRAM core analog circuit design 50+ technical papers and 70+ US patents Presenting author of 4 ISSCC and 1 VLSI